Engineering AlGaAs-on-insulator toward quantum optical applications

Optical nutation in GaAs/AlGaAs core-shell quantum dot

Retrodictive quantum optical state engineering

Although it has been known for some time that quantum mechanics can be formulated in a way that treats prediction and retrodiction on an equal footing, most attention in engineering quantum states has been devoted to predictive states, that is, states associated with a preparation event. Retrodictive states, which are associated with a measurement event and propagate backwards in time, are also...

Efficient optical quantum state engineering.

We discuss a novel method of efficiently producing multiphoton states using repeated spontaneous parametric down-conversion. Specifically, by attempting down-conversion several times, we can pseudodeterministically add photons to a mode, producing various several-photon states, e.g., Fock states and N00N states (number-path entangled states of the form |N(A), 0(B)>+|0(A), N(B)>). This scheme is...

Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells

We study the effects of low-temperature capping (200-450°C) on the optical properties of GaAs/AlGaAs quantum wells. Photoluminescence measurements clearly show the formation of abundant nonradiative recombination centers in an AlGaAs capping layer grown at 200°C, while there is a slight degradation of the optical quality in AlGaAs capping layers grown at temperatures above 350°C compared to tha...

Multiple quantum well AlGaAs nanowires.

This letter reports on the growth, structure, and luminescent properties of individual multiple quantum well (MQW) AlGaAs nanowires (NWs). The composition modulations (MQWs) are obtained by alternating the elemental flux of Al and Ga during the molecular beam epitaxy growth of the AlGaAs wire on GaAs (111)B substrates. Transmission electron microscopy and energy dispersive X-ray spectroscopy pe...